Anomalously large contributions of vacancies and dislocations to Hall coefficient and thermoelectric power of copper films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Thin Film Phenomena;Chopra,1969
2. Structural defect thermoelectric power in thin copper films
3. Electron transport properties of thin copper films. I.
4. Characteristics of the Annealing Kinetics of Tin Films Deposited at 88°K
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1. A study of changes taking place in Cu–Cr–Zr alloy during severe plastic deformation and annealing as evaluated by thermoelectric power measurements;Scripta Materialia;2012-11
2. My experiments with thin films—the nanostate of matter;Bulletin of Materials Science;1995-10
3. Electrical resistivity of copper and nickel thin‐film interconnections;Journal of Applied Physics;1990-03-15
4. Effect of defect structure on the electrical conduction mechanism in metallic thin films;Journal of Materials Science;1985-06
5. Checking the assumption related to the structure of thin metal films from the variations in the Hall coefficient;Journal of Materials Science Letters;1984-05
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