High pressure experiments on AlxGa1−xAs-GaAs quantum-well heterostructure lasers-Reference-Cited by-同舟云学术

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High pressure experiments on AlxGa1−xAs-GaAs quantum-well heterostructure lasers

Published:1982-06 Issue:9 Volume:42 Page:633-636
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Kirchoefer S.W,Holonyak N,Hess K,Gulino D.A,Drickamer H.G,Coleman J.J,Dapkus P.D

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference16 articles.

1. The effect of pressure on zinc blende and wurtzite structures

2. Quantum-well heterostructure lasers

3. Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor Optoelectronic Devices;High Pressure in Semiconductor Physics II;1998

2. Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsets;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-07

3. Magneto‐optic determinations of the pressure dependence of band‐gap energies and effective masses in strained‐layer superlattices;Applied Physics Letters;1985-09

4. Effect of mismatch strain on band gap in III‐V semiconductors;Journal of Applied Physics;1985-06-15

5. Photoluminescence studies of a GaAs-Ga1−xAlxAs superlattice at 8–300 K under hydrostatic pressure (0–70 kbar);Physical Review B;1985-03-15

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