Photoluminescence measurements of the 1.55 eV band of Ge doped AℓxGa1−xAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Photoluminescence of Ge-Doped GaxAl1-xAs
2. Photoluminescence of GaxAl1-xAs Crystals Grown by Liquid Phase Epitaxy
3. Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAs
4. Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution
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2. Photoluminescence of AlxGa1−xAs alloys;Journal of Applied Physics;1994-05-15
3. Time‐resolved spectra of the 1.55‐eV band in Ge‐doped AlxGa1−xAs;Journal of Applied Physics;1990-04
4. gallium aluminum arsenide (Ga(1-x)Al(x)As), optical properties of deep defects;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
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