X-ray assisted nitridation of silicon surface at ambient temperature-Reference-Cited by-同舟云学术

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X-ray assisted nitridation of silicon surface at ambient temperature

Published:1989-09 Issue:9 Volume:71 Page:721-725
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Lai B.,Nachman R.,Ray-Chaudhuri A.K.,Cerrina F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference25 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Silicon Nitride for Microelectronic Applications;Milek,1971

3. Analog Integrated Circuits;Soclof,1985

4. The preparation, characterization and applications of silicon nitride thin films

5. Thermal Nitridation of Si and SiO/sub 2/ for VLSI

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Initial stages of the thermal nitridation of the Si(100) surface with NH3 and NO: a surface sensitive study of Si 2p core-level shifts;Surface Science;1994-12

2. Synchrotron radiation induced reactions on surfaces: mechanisms and applications;Applied Surface Science;1994-05

3. Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation;Applied Physics Letters;1994-04-11

4. Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative study;Applied Surface Science;1993-03

5. Photoinduced oxynitride formation on semiconductors: NO on Si(111)2 × 1;Applied Surface Science;1992-01

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