Initial stages of the thermal nitridation of the Si(100) surface with NH3 and NO: a surface sensitive study of Si 2p core-level shifts
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference55 articles.
1. Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/oxynitride films versus substrate temperature
2. Reaction of Si(100) single crystals with nitrogen atoms
3. Kinetics of Si(100) nitridation first stages by ammonia: Electron- beam-induced thin film growth at room temperature
4. Thermal nitridation of Si(100)-2 × 1 surface by NH3: XPS results
5. Thermally grownSi3N4thin films on Si(100): Surface and interfacial composition
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1. Thermal stability of an ultrathin hafnium oxide film on plasma nitrided Si(100);Surface Science;2013-10
2. Ultra-thin high-quality silicon nitride films on Si(111);EPL (Europhysics Letters);2011-04-01
3. Thermal behavior of the Au/c-Si3N4/Si(111) interface;Journal of Applied Physics;2008-04-15
4. Mechanisms for NH3 Decomposition on the Si(111)-7 × 7 Surface: A DFT Cluster Model Study;The Journal of Physical Chemistry C;2007-10-16
5. Cooperative nitrogen insertion processes: Thermal transformation ofNH3on a Si(100) surface;Physical Review B;2007-08-30
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