Interband critical point parameters determined by ellipsometry in ZnxHg1−xSe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Proc. 3rd Int. Conf. Physics of Narrow-Gap Semiconductors;Gaveleshko,1978
2. Far infrared reflection spectra due to lattice and free carrier in ZnxHg1−xSe
3. Point defects and non-stoichiometry in HgSe
4. Far infrared studies of lattice and free carrier effects in CdxHg1−xSe
5. Ellipsometric studies of electronic interband transitions inCdxHg1−xTe
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1. Relativistic effects in the optical response of HgSe by time-dependent density functionals theory;International Journal of Quantum Chemistry;2001
2. Optical properties of HgSe;Physical Review B;1995-02-15
3. Raman scattering in narrow-gap semiconductors;Journal of Chemical Sciences;1990-10
4. Dielectric Constant in ZnxHg1–xSe Determined by Raman Scattering;physica status solidi (b);1990-08-01
5. Dielectric properties of narrow-gap semiconductors;Journal of Crystal Growth;1990-04
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