Optically detected magnetic resonance (ODMR) in a-Si1-xGex: H-alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Electronic Properties of Amorphous SixGe1−x:H Films
2. Structural, electrical, and optical properties ofa-Si1−xGex:H and an inferred electronic band structure
3. Existence of a universal low-energy tail in the photoluminescence ofa-Si1−xGex:H alloys
4. Photoluminescence of doped and undoped amorphous Si/Ge alloys
5. ESR studies on sputtered amorphous SiC, SiGe and GeC films
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spin-dependent processes in amorphous and microcrystalline silicon: a survey;Journal of Non-Crystalline Solids;2000-05
2. Defects and Microstructure in Optimized a-Si:Ge:H - New Results from Electron Spin Resonance Experiments;MRS Proceedings;1995
3. Electronic structure ofa-Si1−xNx:H anda-Ge1−xNx:H;Physical Review B;1990-03-15
4. Influence of the defect concentration on the recombination in electron bombarded a-Si:Ge:H alloys studied by photoluminescence and electron spin resonance;Journal of Non-Crystalline Solids;1989-12
5. Defects and recombination in a-Si:1−xGex:H;Journal of Non-Crystalline Solids;1989-12
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