Electron occupation in subbands dependent on the indium mole fraction in one-side-modulation-doped quantum wells-Reference-Cited by-同舟云学术

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Electron occupation in subbands dependent on the indium mole fraction in one-side-modulation-doped quantum wells

Published:1995-04 Issue:4 Volume:94 Page:305-308
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Kim T.W.,Jung M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference17 articles.

1. Electronic properties of two-dimensional systems

2. Summary Abstract: Low-temperature electrical transport studies of the two-dimensional electron gas at p-InSb interfaces

3. Modulation of superlattice band structure via δ doping

4. Electric subbands in anIn0.65Ga0.35As quantum well betweenIn0.52Al0.48As andIn0.53Ga0.47As potential barriers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MAGNETOTRANSPORT STUDY IN SEMICONDUCTOR QUANTUM WELL SYSTEMS;Journal of Physics and Chemistry of Solids;1998-09

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