Resistively Shunted NbN/AlN/NbN Tunnel Junctions for Single Flux Quantum Circuits
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference11 articles.
1. 9 K operation of RSFQ logic cells fabricated by NbN integrated circuit technology
2. Characteristics of NbN/AlN/NbN tunnel junctions operating at 10 K
3. RSFQ logic/memory family: a new Josephson-junction technology for sub-terahertz-clock-frequency digital systems
4. Preparation of overdamped NbTiN Josephson junctions with bilayered Ti–TiN barriers
5. Self-Shunted NbN Junctions With ${\rm NbN}_{x}/{\rm AlN}$ Bilayered Barriers for 4 K Operation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Flux-to-voltage characteristic simulation of superconducting nanowire interference device*;Chinese Physics B;2020-08-01
2. SNS Josephson Junctions With Tunable Ta–N Barriers;IEEE Transactions on Applied Superconductivity;2019-08
3. Fabrication of NbTiN/Al–AlNX/NbTiN Josephson Junctions for Superconducting Circuits Operating Around 10 K;IEEE Transactions on Applied Superconductivity;2016-08
4. Characterization of NbN Tunnel Junctions With Radical-Nitrided $\hbox{AlN}_{\rm x}$ Barriers;IEEE Transactions on Applied Superconductivity;2013-06
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