Flux-to-voltage characteristic simulation of superconducting nanowire interference device*

Abstract

Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current–voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.