Formation of self assembled PbTe quantum dots in CdTe on Si(111)
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference16 articles.
1. High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector
2. Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors
3. Evaluation of the fundamental properties of quantum dot infrared detectors
4. Mid-Infrared Tunable Resonant Cavity Enhanced Detectors
5. Auger recombination and junction resistance in lead‐tin telluride
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