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3. Characteristics of a δ ‐doped GaAs/InGaAs p‐channel heterostructure field‐effect transistor
4. Single and dual p-doped channel In/sub 0.52/Al/sub 0.48/ As/In/sub x/Ga/sub 1-x/As (x=0.53, 0.65) FET's and the role of doping
5. Optimized double heterojunction pseudomorphic InP/In/sub x/Ga/sub 1-x/As/InP (0.64>or=x>or=0.82)p-MODFETs and the role of strain in their design