Effect of strain and confinement on the effective mass of holes in InSb quantum wells-Reference-Cited by-同舟云学术

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Effect of strain and confinement on the effective mass of holes in InSb quantum wells

Published:2011-05 Issue:3 Volume:29 Page:03C110
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Gaspe C. K.,Edirisooriya M.,Mishima T. D.,Jayathilaka P. A. R. Dilhani,Doezema R. E.,Murphy S. Q.,Santos M. B.,Tung L. C.,Wang Y.-J.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3553457

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well;Physical Review Research;2023-02-15

2. Quantization in magnetoresistance of strained InSb whiskers;Low Temperature Physics;2019-05

3. Strain-Induced Berry Phase in GaSb Microcrystals;Journal of Low Temperature Physics;2019-04-27

4. Berry phase in strained InSb whiskers;Low Temperature Physics;2018-11

5. Charge carrier holes and Majorana fermions;Physical Review B;2017-05-09

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