Luminescence and electron transport properties of GaN and AlN layers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Radiation
Reference8 articles.
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3. Epitaxial-Growth and Characterization of Zincblende Gallium Nitride on (0 0 1) Silicion;Lei;J. Appl. Phys.,1992
4. Growth of zinc blende-GaN on β-SiC by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source;Liu;J. Appl. Phys.,1993
5. Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence;Meninger;Phys. Rev. B,1996
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