Computation of etched track profiles in CR-39 and comparison with experimental results for light ions of different kinds and energies
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Radiation
Reference16 articles.
1. Variation of the track etch rates along the alpha particle trajectories in two types of CR-39;Dörschel;Radiat. Meas.,1996
2. Measurement of track parameters and etch rates in proton-irradiated CR-39 detectors and simulation of neutron dosemeter responses;Dörschel;Radiat. Prot. Dosim.,1997
3. Track parameters and etch rates in alpha-irradiated CR-39 detectors used for dosimeter response calculation;Dörschel;Radiat. Prot. Dosim.,1998
4. Computation of the critical angle of track registration in alpha-irradiated CR-39 detectors on the basis of the time-dependent track etch rates;Dörschel;Radiat. Prot. Dosim.,1999
5. Variation of the track etch rate along the trajectories of light ions in CR-39;Dörschel;Radiat. Meas.,2002
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2. Atomistic Model of Wet Chemical Etching of Swift Heavy Ion Tracks;The Journal of Physical Chemistry C;2023-03-07
3. Etched track profiles for relativistic 7 GeV silicon and 17.48 GeV Nickel ions in PADC detector: The case study of convex track walls;Radiation Physics and Chemistry;2021-10
4. Dependence of track etching kinetics on chemical reactivity around the ion path;Scientific Reports;2019-10-25
5. Role of intermediate species in the formation of ion tracks in PADC: A review;Polymer Degradation and Stability;2019-03
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