Characteristics of semiconductor bridge (SCB) plasma generated in a micro-electro-mechanical system (MEMS)-Reference-Cited by-同舟云学术

Characteristics of semiconductor bridge (SCB) plasma generated in a micro-electro-mechanical system (MEMS)

Published:2002-12 Issue:6 Volume:305 Page:413-418
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Kim Jong-Uk,Park Chong-Ook,Park Myung-Il,Kim Sun-Hwan,Lee Jung-Bok

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference7 articles.

1. L.E. Hollander Jr., Semiconductor explosive igniter, US Patent 3 366 055, issued January 30, 1969

2. Semiconductor bridge: A plasma generator for the ignition of explosives

3. B.A.M. Tovar, Electrothermal transients in highly doped phosphorous diffused silicon-on-sapphire semiconductor bridge under high current density conditions, PhD dissertation, University of New Mexico, 1993

4. Characteristics of plasma generated by polysilicon semiconductor bridge (SCB)

5. Diagnostics of nanosecond dynamics of the plasma produced during KrF excimer laser ablation of zirconia in vacuum

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