Suppression of Short Channel Effects(SCEs) by Dual Material Gate Vertical Surrounding Gate(DMGVSG) MOSFET: 3-D TCAD Simulation
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics
Reference14 articles.
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4. Wenwei Yang, Zhiping Yu, and Lilin Tian, Scaling Theory for FinFETs Based on 3-D Effects Investigation, IEEE Transactions on Electronic Devices 54 (5) (2007) 1140-1147.
5. Celisa K. Date and James D. Plummer, Increased Hot-Carrier Effects Using SiGe Layers in Vertical Surrounding-Gate MOSFETs, IEEE Transactions on Electronic Devices 48 (12) (2001) 2690-2694.
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