Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si
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Published:2023-02-28
Issue:1
Volume:23
Page:8-16
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ISSN:1598-1657
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Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
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language:en
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Short-container-title:JSTS
Author:
Kang Ga-Eon,Kang In-Man,Lee Sang-Ho,Park Jin,Min So-Ra,Kim Geon-Uk,Heo Jun-Hyeok,Jang Jaewon,Bae Jin-Hyuk,Lee Sin-Hyung
Publisher
The Institute of Electronics Engineers of Korea
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials