A New Method to Extract Piezoresistive Coefficients in Polysilicon Through Gauges Placed on a MEMS Membrane
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics
Reference4 articles.
1. Y. Onuma, “Piezoresistive properties of polycrystalline silicon thin film,” Japanese Journal of Applied Physics, 1972.
2. Polycrystalline silicon as a strain gauge material;French;Journal of Physics E: Scientific,1986
3. A. C. Lapadatu, D. De Bruyker, H. Jakobsen, and R. Puers, “A new concept for a self-testable pressure sensor based on the bimetal effect,” Sensors and Actuators A: Physical, vol. 82, no. 1-3, pp. 69-73, 2000.
4. A. Salette et al., “Thermal sensors cointegrated within a MEMS thermally actuated ultrathin membrane,” Journal of Micromechanics and Microengineering, vol. 22, no. 6, p. 065029, Jun. 2012.
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