Electronic levels in MEH-PPV-Reference-Cited by-同舟云学术

Electronic levels in MEH-PPV

Published:2000-06 Issue: Volume:111-112 Page:535-537
ISSN:0379-6779
Container-title:Synthetic Metals
language:en
Short-container-title:Synthetic Metals

Author:

Stallinga P,Gomes H.L,Rost H,Holmes A.B,Harrison M.G,Friend R.H

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

2. Capacitance properties of MIS tunnel diodes

3. Techniques of Physics 14: The Electrical Characterization of Semiconductors: Majority Carriers and Electron States;Blood,1992

4. Capacitance-transient-spectroscopy model for defects with two charge states

5. Electrical properties of dislocations and point defects in plastically deformed silicon

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