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Thermal and kinetic modelling of low-pressure chemical vapour deposition hot-wall tubular reactors

  • Published:1992-10 Issue:15-16 Volume:47 Page:3827-3838
  • ISSN:0009-2509
  • Container-title:Chemical Engineering Science
  • language:en
  • Short-container-title:Chemical Engineering Science

Author:

Azzaro C.,Duverneuil P.,Couderc J.P.

Publisher

Elsevier BV

Subject

Applied Mathematics,Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Reference21 articles.

1. Analyse et modélisation du fonctionnement des réacteurs de LPCVD: cas du silicium pur ou dopé in situ;Azzaro;Thèse de doctorat INPT,1991

2. Modelling of pure and in situ doped polycrystalline silicon deposition in LPCVD reactors;Azzaro;Mater. Manufacturing Proc.,1991

3. Actes du Colloque Rencontre SFT 89, Thermique et Génie des Procédés;Azzaro,1989

4. An understanding of in situ boron doped polysilicon films by characterization and simulation;Azzaro,1991

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1. Airlift loop reactors;Numerical Simulation of Multiphase Reactors with Continuous Liquid Phase;2014

2. Film Thickness Prediction of Poly-Silicon LPCVD Process with a Simplified Two-Step Surface Reaction Model;ECS Journal of Solid State Science and Technology;2013

3. Predictable Simple Reaction Model for Poly-Silicon LPCVD Process;ECS Transactions;2009-09-25

4. Predictive Model Extraction for Polysilicon Low-Pressure Chemical Vapor Deposition in a Commercial Scale Reactor;Journal of The Electrochemical Society;2007

5. Multiscale Analysis of Silicon Low-Pressure Chemical Vapor Deposition;Japanese Journal of Applied Physics;2005-11-09
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