Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO 2 high-aspect-ratio pattern as scattering layer-Reference-Cited by-同舟云学术

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Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO 2 high-aspect-ratio pattern as scattering layer

Published:2017-08 Issue: Volume:43 Page:S609-S612
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Choo Soyoung,Choi Jinyoung,Choi Hak-Jong,Huh Daihong,Son Soomin,Kim Yang Doo,Lee Heon

Funder

National Research Foundation of Korea(NRF)

Ministry of Science, ICT & Future Planning

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection;Matioli;J. Appl. Phys.,2011

2. Enhanced light extraction in GaInN light-emitting diode with pyramid reflector;Xi;IEEE Photon. Tech. Lett.,2006

3. Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN;Chhajed;Appl. Phys. Lett.,2011

4. Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution;Kim;Appl. Phys. Lett.,2009

5. Enhancement of light extraction through the wave‐guiding effect of ZnO Sub‐microrods in InGaN blue light‐emitting diodes;Kim;Adv. Funct. Mater.,2010

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