Luminescence properties of Eu-doped SnO2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces;Kumar;Appl. Phys. Lett.,1989
2. Preparation conditions of transparent and conductive SnO2 thin films by reactive evaporation;Lousa;Vacuum,1994
3. Preparation and properties of antimony-doped SnO2 films by thermal decomposition of tin 2-ethylhexanoate;Tsunashima;J. Mater. Sci.,1986
4. Dye sensitization of nanocrystalline tin oxide by perylene derivatives;Ferrere;J. Phys. Chem. B,1997
5. Investigations on anodic photocurrent loss processes on dye sensitized solar cells: comparison between nanocrystalline SnO2 and TiO2 films;Tachibana;Chem. Phys. Lett.,2002
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