Insituinvestigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101511
Reference13 articles.
1. Auger electron and x‐ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon‐tin oxide interface: Evidence of a plasma‐induced reaction
2. Interaction of hydrogenated amorphous silicon films with transparent conductive films
3. Diffusion of indium and tin into a-SiC:H from transparent electrode studied by XPS
4. Lack of chemical interaction of hydrogenated amorphous silicon with indium-doped zinc oxide transparent conductive films
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