Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process

Author:

Cho Seulki,Min Seong-Ji,Cho Myung-Yeon,Kim Ik-Soo,Kim So-Mang,Moon Byung-Moo,Moon Kyoung-Sook,Lee Daeseok,Oh Jong-Min,Koo Sang-Mo

Funder

Kwangwoon University

Korea Institute of Energy Technology Evaluation and Planning

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Ultrawide-bandgap semiconductors: research opportunities and challenges;Tsao;Adv. Electron. Mater.,2018

2. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

3. Material science and device physics in SiC technology for high-voltage power devices of thermal oxidation and hydrogen annealing;Kimoto;Jpn. J. Appl. Phys.,2015

4. An optimized structure of 4H-SiC U-shaped trench gate MOSFET;Wang;IEEE Trans. Electron Devices,2015

5. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures;Pradeepkumar;Appl. Phys. Lett.,2016

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