Defect formation in AlN after irradiation with He2+ ions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference41 articles.
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2. Theoretical investigations on helium trapping in the Zr/Ti2AlC interface;Luo;Surf. Coat. Technol.,2017
3. First-principles investigation on trapping of multiple helium atoms within a tungsten monovacancy;Takayama;Jpn. J. Appl. Phys.,2013
4. Vacancy-enhanced mechanism for helium diffusion along Σ7 grain boundary in α-Al2O3: a first principle study;Wang;Nucl. Instrum. Methods Phys. Res. Sect. B: Beam Interact. Mater. At.,2017
5. Interaction between helium and intrinsic point defects in 3C-SiC single crystal;Sun;J. Appl. Phys.,2017
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