Interaction between helium and intrinsic point defects in 3C-SiC single crystal-Reference-Cited by-同舟云学术

Interaction between helium and intrinsic point defects in 3C-SiC single crystal

Published:2017-06-14 Issue:22 Volume:121 Page:225111
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sun Dan¹,Li Ruihuan²,Ding Jianhua¹,Zhang Pengbo¹³,Wang Yuanyuan¹,Zhao Jijun¹

Affiliation:

1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China

2. Changzhou Vocational Institute of Mechatronic Technology, Changzhou 213164, China

3. Department of Physics, Dalian Maritime University, Dalian 116026, China

Funder

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985604

Reference55 articles.

1. Silicon Carbide Electronic Materials and Devices

2. Evaluation of the Fracture Strength for Silicon Carbide Layers in the Tri-Isotropic-Coated Fuel Particle

3. Determining the shear properties of the PyC/SiC interface for a model TRISO fuel

4. Handbook of SiC properties for fuel performance modeling

5. The effect of neutron irradiation on the fiber/matrix interphase of silicon carbide composites

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Release behavior of an interstitial helium atom from 3C-SiC(100) subsurface: A first-principles study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-08

2. Calculation of positron lifetimes and momentum distributions of electron-positron annihilation radiation in Mg-doped 3C-SiC;Physics Letters A;2024-03

3. Deep learning inter-atomic potential for irradiation damage in 3C-SiC;Computational Materials Science;2024-01

4. Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide;Materials;2023-12-27

5. Effect of H and Pd atoms on the migration of He atoms in 3C–SiC;Progress in Nuclear Energy;2023-11