Fabrication of 4H-SiC piezoresistive pressure sensor for high temperature using an integrated femtosecond laser-assisted plasma etching method

Author:

Wu Chen,Fang XudongORCID,Fang Ziyan,Sun Hao,Li Sheng,Zhao Libo,Tian Bian,Zhong Ming,Maeda Ryutaro,Jiang Zhuangde

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. A comprehensive review of recent progress, prospect and challenges of silicon carbide and its applications;Manikandan;Silicon,2022

2. Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications;Wu;IEEE Sensor. J.,2006

3. Piezoresistive Pressure Sensors for Applications in Harsh Environments—A Roadmap[M]//Modern Sensing Technologies;Ngo,2019

4. Optimal design of SiC piezoresistive pressure sensor considering material anisotropy;Wu;Rev. Sci. Instrum.,2020

5. Advances in silicon carbide science and technology at the micro- and nanoscales;Maboudian;J. Vacuum Sci. Technol. A Vacuum Surfaces Films,2013

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