Effect of temperature on the anisotropic distribution of defects in self-ion irradiated α-SiC: In-situ TEM investigation-Reference-Cited by-同舟云学术

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Effect of temperature on the anisotropic distribution of defects in self-ion irradiated α-SiC: In-situ TEM investigation

Published:2023-12 Issue:24 Volume:49 Page:40787-40796
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Wang Zuojiang,Cao Ziqi,Li Yuanming,Liu Shichao,Ran Guang

Funder

National Natural Science Foundation of China

Science and Technology Department of Sichuan Province

National Science Fund for Distinguished Young Scholars

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference57 articles.

1. Ionization-induced annealing of pre-existing defects in silicon carbide;Zhang;Nat. Commun.,2015

2. The structural evolution of light-ion implanted 6H-SiC single crystal: comparison of the effect of helium and hydrogen;Daghbouj;Acta Mater.,2020

3. Coupled effects of electronic and nuclear energy deposition on damage accumulation in ion-irradiated SiC;Nuckols;Acta Mater.,2020

4. Materials for future nuclear energy systems;Was;J. Nucl. Mater.,2019

5. 7.13 - properties and characteristics of SiC and SiC/SiC composites;Lamon,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the variation in mechanical properties of α- and β-SiC under high-temperature Si-ion irradiation;Ceramics International;2024-10

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