Ionization-induced annealing of pre-existing defects in silicon carbide
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Link
http://www.nature.com/articles/ncomms9049.pdf
Reference39 articles.
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5. Nakamura, D. et al. Ultrahigh-quality silicon carbide single crystals. Nature 430, 1009–1012 (2004) .
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