Low-temperature metallization of SiC ceramic with Sn0.5Zn via ultrasound assisted formation of an amorphous transition layer

Author:

Chen Shu,Xu Zhiwu,Ma Zhongwei,Chen Jiaxu,Yan Jiuchun,Li Zhengwei

Funder

China Postdoctoral Science Foundation

Postdoctoral Foundation of Hei Long Jiang Province

Heilongjiang Provincial Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Production of large-area single-crystal wafers of cubic SiC for semiconductor devices;Shigehiro;Appl. Phys. Lett.,1983

2. Technological breakthroughs in growth control of silicon carbide for high power electronic device;Matsunami;Jpn. J. Appl. Phys.,2004

3. Microstructure evolution of SiC/SiC joints during ultrasonic-assisted air bonding using a Sn–Zn–Al alloy;Wu;Ceram. Int.,2018

4. Effect of metallic coating on the properties of copper-silicon carbide composites;Chmielewski;Appl. Surf. Sci.,2017

5. Low-stress design of bonding structure and its thermal shock performance (-50 to 250 °C) in SiC/DBC power die-attached modules;Chen;J. Mater. Sci.,2018

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