Chapter 6 Epitaxial growth modeling
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Elsevier
Reference114 articles.
1. Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor
2. Morphological instability of a terrace edge during step-flow growth
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1. Kinetic Monte Carlo simulation for semiconductor processing: A review;Progress in Materials Science;2018-03
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4. Numerical investigation on new configurations for vapor-phase aerosol reactors;Chemical Engineering Science;2009-08
5. Homoepitaxial silicon carbide deposition processes via chlorine routes;Surface and Coatings Technology;2007-09
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