Chapter 2 Factors Affecting the Performance of (Al,Ga)As/GaAs and (Al,Ga)As/InGaAs Modulation-Doped Field-Effect Transistors: Microwave and Digital Applications-Reference-Cited by-同舟云学术

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Chapter 2 Factors Affecting the Performance of (Al,Ga)As/GaAs and (Al,Ga)As/InGaAs Modulation-Doped Field-Effect Transistors: Microwave and Digital Applications

Published:1987 Issue: Volume: Page:135-201
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
Short-container-title:

Author:

Morkoç H.,Unlu H.

Publisher

Elsevier

Reference114 articles.

1. Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions grown by molecular beam epitaxy

2. High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

3. Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

4. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

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1. Modelling of Semiconductors for Low Dimensional Heterostructure Devices;Topics in Applied Physics;2022

2. Density-functional theory investigation of energy gaps and optical properties of Hg 1− x Cd x Te and In 1− x Ga x As;Chinese Physics B;2012-01

3. Modeling and Simulation of Heterojunction Bipolar Transistors;Springer Series in MATERIALS SCIENCE;2004

4. Cyclotron masses in InGaAs/GaAs superlattices and InGaAs/AlAs superlattices;Superlattices and Microstructures;2000-05

5. Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors;Thin Solid Films;1991-02

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