Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

Published:1991-02 Issue:2 Volume:196 Page:295-303
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zhang J.,Tien N.C.,Lin E.W.,Wieder H.H.,Ku W.H.,Tu C.W.,Poker D.B.,Chu S.N.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT

2. Chapter 2 Factors Affecting the Performance of (Al,Ga)As/GaAs and (Al,Ga)As/InGaAs Modulation-Doped Field-Effect Transistors: Microwave and Digital Applications

3. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

4. Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate;IEEE Electron Device Letters;1992-12

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