Chapter 13 Intrinsic/Internal Gettering
Author:
Publisher
Elsevier
Reference85 articles.
1. Latch-up and image crosstalk suppression by internal gettering
2. Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques
3. Early stages of oxygen segregation and precipitation in silicon
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1. Role of Defects, Impurities and Deviations from the Stoichiometry in the Optoelectronic Properties of Semiconductors;Chemistry of Semiconductors;2023-11-24
2. Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon;ECS Journal of Solid State Science and Technology;2015
3. Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers;Solid State Phenomena;2013-10
4. Origins and Atomic Properties of H-Like Centres;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009
5. Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafers;physica status solidi (a);2006-06
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