Robust enhancement of valley polarization and quantum yield in composition grading lateral heterostructure of MoS2-WS2 monolayer-Reference-Cited by-同舟云学术

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Robust enhancement of valley polarization and quantum yield in composition grading lateral heterostructure of MoS2-WS2 monolayer

Published:2024-02 Issue:1 Volume:34 Page:187-193
ISSN:1002-0071
Container-title:Progress in Natural Science: Materials International
language:en
Short-container-title:Progress in Natural Science: Materials International

Author:

Kang Mengke,Zhang Cheng,Mu Congpu,Zhai Kun,Xue Tianyu,Wang Bochong,Wen Fusheng,Cheng Yingchun,Xiang Jianyong,Dai Jun-Feng,Nie Anmin^ORCID,Liu Zhongyuan

Funder

Natural Science Foundation of Hebei Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference58 articles.

1. Vertical MoS2 transistors with sub-1-nm gate lengths

2. Ultralow contact resistance between semimetal and monolayer semiconductors

3. Approaching the quantum limit in two-dimensional semiconductor contacts

4. Valley polarization in MoS2 monolayers by optical pumping

5. Control of valley polarization in monolayer MoS2 by optical helicity

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. One-step hydrothermal synthesis of few-layered metallic phase MoS2 for high-performance supercapacitors;Progress in Natural Science: Materials International;2024-04

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