Growth and characterisation of polycrystalline silicon ingots doped with Cu, C, B or Al by directional solidification for photovoltaic application-Reference-Cited by-同舟云学术

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Growth and characterisation of polycrystalline silicon ingots doped with Cu, C, B or Al by directional solidification for photovoltaic application

Published:1989-11 Issue:3-5 Volume:19 Page:221-236
ISSN:0165-1633
Container-title:Solar Energy Materials
language:en
Short-container-title:Solar Energy Materials

Author:

Kishore R.,Pastol J.-L.,Revel G.

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. Crystalline Silicon as a Material for Solar Cells

2. Proc. 6th E.C. Photovoltaic Solar Energy Conf.;Caymax,1985

3. Proc. 5th E.C. Photovoltaic Solar Energy Conf.;Revel,1983

4. Proc. 5th E.C. Photovoltaic Solar Energy Conf.;Schmid,1983

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1. Dynamics at crystal/melt interface during solidification of multicrystalline silicon;High Temperature Materials and Processes;2022-01-01

2. Effect of the Silicon Nitride Coating of Quartz Crucible on Impurity Distribution in Ingot-Cast Multicrystalline Silicon;International Journal of Applied Ceramic Technology;2012-08-27

3. Effect of the Si₃N₄ Coating on the Mc-Si Ingot in the Process of Multicrystalline Silicon Purification by Metallurgical Methods;Materials Science Forum;2011-02

4. Evaluation of diffusion length from a planar‐collector‐geometry electron‐beam‐induced current profile;Journal of Applied Physics;1996-11-15

5. A direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configuration;IEEE Transactions on Electron Devices;1995-05

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