Vacancies and interstitials in germanium and silicon-Reference-Cited by-同舟云学术

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Vacancies and interstitials in germanium and silicon

Published:1956-01 Issue:1 Volume:4 Page:52-57
ISSN:0001-6160
Container-title:Acta Metallurgica
language:en
Short-container-title:Acta Metallurgica

Author:

Mayburg Sumner

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. Vacancies and Interstitials in Heat Treated Germanium

2. J. H. Crawford Jr., et al., personal communication (1954).

3. Localized Electronic States in Bombarded Semiconductors

4. Drift Mobilities in Semiconductors. II. Silicon

5. Crystallization of Silicon from a Floating Liquid Zone

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Concentrations and diffusion coefficients of thermal equilibrium point defects in silicon crystals;Japanese Journal of Applied Physics;2022-06-21

2. Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion;Japanese Journal of Applied Physics;2014-08-21

3. Vacancy formation energy in Czochralski-grown Si crystals determined by a quenching method;Journal of Applied Physics;2011-10-15

4. Vacancy Formation Energy at Metal-Silicon Interface Region;Japanese Journal of Applied Physics;2005-04-22

5. Preservation of Point Defect Distribution in FZ Silicon;Japanese Journal of Applied Physics;1983-01-20

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