Vacancy Formation Energy at Metal-Silicon Interface Region
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Concentrations and diffusion coefficients of thermal equilibrium point defects in silicon crystals;Japanese Journal of Applied Physics;2022-06-21
2. On the mechanisms of stress relaxation and intensification at the lithium/solid-state electrolyte interface;Journal of Materials Research;2019-11-14
3. Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces;Journal of Physics: Condensed Matter;2015-02-19
4. Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion;Japanese Journal of Applied Physics;2014-08-21
5. Point defects generated by oxidation of silicon crystal surface;Physica B: Condensed Matter;2009-12
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