A new type of semiconductor gas sensor based on the n+n combined structure-Reference-Cited by-同舟云学术

A new type of semiconductor gas sensor based on the n+n combined structure

Published:2001-03 Issue:2-3 Volume:73 Page:216-220
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Wang Yu-De,Wu Xing-Hui,Zhou Zhen-Lai

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference14 articles.

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3. Grain size effects on gas sensitivity of porous SnO2-based elements;Xu;Sens. Actuators B,1991

4. N. Yamazoe, New approaches for improving semiconductors gas sensors, in: Proceedings of the Third International Meeting on Chemical Sensors, Cleveland, OH, U.S.A., 1990, pp. 3–8.

5. Relationship between gas sensitivity and microstructure of porous SnO2;Xu;J. Electrochem. Soc. Jpn.,1990

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