Fabrication of V-Groove High Temperature Oxygen Sensor by Gallium Oxide

Abstract

Effects of a metal oxide structure on the oxygen sensing properties are investigated. In the existence of the etched V-groove gallium oxide geometry, its electrical and sensing properties, i.e., high sensitivity and response time areinvestigated. Grain sizes of the material are dependent on different sputtering conditions and investigated by AFM. Under the partial-voltage circuit measurement, it can be confirmed that the increase of temperature will result in the increase of resistance for the Ga2O3 oxygen sensor. From experiment, good stability and repeatability of the oxide sensor are demonstrated when tested under oxygen concentration. These properties show that the oxide structure has a good potential for high sensitivity oxygen sensor.