Thin (NiO)1−x(Al2O3)x, Al doped and Al coated NiO layers for gas detection with HSGFET

Author:

Bögner M,Fuchs A,Scharnagl K,Winter R,Doll T,Eisele I

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. W. Göpel, M. Henzler, Oberflächenphysik des Festkörpers, Teubner, Stuttgart, 1994, Chapter 5.

2. T. Wolkenstein, Electronic Processes on Semiconductor Surfaces during Chemisorption, Plenum, New York, 1991, Chapter 2.

3. Effects of additives on semiconductor gas sensors;Yamazoe;Sensors Actuators,1983

4. The mixed oxide Al2O3-V2O5 as a semiconductor gas sensor for NO and NO2;Ishihara;Sensors Actuators,1989

5. D. Mutschall, S.A. Berger, A. Scherz, E. Obermeier, Reactive sputtering and catalytic modification of NiO for gas sensing applications, in: Proceedings IMCS '96, Gaithersburg, p. 28.

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