Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization-Reference-Cited by-同舟云学术

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Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization

Published:2015 Issue: Volume: Page:323-335
ISSN:
Container-title:Modeling, Characterization, and Production of Nanomaterials
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Author:

Eymery J.,Le Si Dang D.

Publisher

Elsevier

Reference74 articles.

1. Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy;Albert;J. Cryst. Growth,2014

2. On the polarity of GaN micro- and nanowires epitaxially grown on sapphire 0001 and Si 111 substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy;Alloing;Appl. Phys. Lett.,2011

3. A parametric study of InGaN/GaN nanorod core-shell LEDs;Auf Der Maur;IEEE Trans. Electron Devices,2012

4. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells;Bergbauer;Nanotechnology,2010

5. Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires;Blanchard;Semicond. Sci. Technol.,2014

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