1. High temperature characteristics of AlGaN/GaN modulation doped field effect transistors;Aktas;Applied Physics Letters,1996
2. Effects of electromagnetic near-field contrainte on SiGe HBT’s reliability;Alaeddine;Microelectronics Reliability Journal,2009
3. Le Transistor Bipolaire á Hétérojonction Si/SiGe sous contraintes électromagnetiques: des dégradations électriques á l’analyse structurale;Alaeddine,2011
4. High- temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates;Arulkumaran;Applied Physics Letters,2002
5. Mise en place d’une méthodologie de caractérisation en immunité champ proche de dispositifs électroniques;Atrous,2009