Influence of electron–electron scattering on the hot electron distribution in ultra-short Si-MOSFETs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Understanding hot-electron transport in silicon devices: Is there a shortcut?;Fischetti;J. Appl. Phys.,1995
2. A novel approach for introducing the electron–electron and electron–impurity interactions in particle-based simulations;Gross;IEEE Electron Dev. Lett.,1999
3. Performance degradation of small silicon devices caused by long-range Coulomb interactions;Fischetti;Appl. Phys. Lett.,2000
4. Semiconductor transport simulation with the local iterative Monte Carlo technique;Jakumeit;IEEE Trans. Electron Dev.,2001
5. Computational aspects of the local iterative Monte Carlo technique;Jakumeit;Int. J. Mod. Phys. C,2000
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