Hot-carrier damage from high to low voltage using the energy-driven framework-Reference-Cited by-同舟云学术

Hot-carrier damage from high to low voltage using the energy-driven framework

Published:2007-09 Issue:9-10 Volume:84 Page:1938-1942
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Guerin C.,Huard V.,Bravaix A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

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3. Impact Ionization and Distribution Functions in Sub-Micron nMOSFET Technologies;Bude;Electron Dev. Lett.,1995

4. Role of E-E Scattering in the Enhancement of Channel Hot Carrier Degradation of Deep-Submicron NMOSFETS at High Vgs Conditions;Rauch;IEEE Trans. Dev. Mat. Reliab.,2001

5. Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption;Hess;Appl. Phys. Lett.,1999

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