Expanded model for anharmonic vibrational excitation of oxygen in silicon
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Vibrational energy levels of oxygen in silicon up to one-A2u-phonon plus one-A1g-phonon states
2. Theory of local-phonon-coupled low-energy anharmonic excitation of the interstitial oxygen in silicon
3. Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal
4. Abinitiocalculation of the local vibratory modes of interstitial oxygen in silicon
5. Geometry and quantum delocalization of interstitial oxygen in silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nonlocal host isotope effect in silicon: High-resolution spectroscopy of the 29 cm−1oxygen vibrational line;Physical Review B;2012-08-06
2. Vibrational Absorption of O and N Interstitial Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27
3. The spectral bandshape of the ν3(1136 cm− 1) vibration of oxygen in silicon and dilute silicon–germanium alloys;Journal of Physics: Condensed Matter;2010-11-26
4. Isotope Dependence of the Lifetime of the1136−cm−1Vibration of Oxygen in Silicon;Physical Review Letters;2006-06-08
5. Interaction between localized and extended modes of oxygen in silicon;Physica B: Condensed Matter;2003-12
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