Vibrational energy levels of oxygen in silicon up to one-A2u-phonon plus one-A1g-phonon states
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Absorption of oxygen in silicon in the near and the far infrared
2. Theory of local-phonon-coupled low-energy anharmonic excitation of the interstitial oxygen in silicon
3. Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal
4. Infrared absorption by interstitial oxygen in germanium-doped silicon crystals
5. Far-infrared absorption by interstitial oxygen impurities in silicon crystals
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