Contactless studies of semi-insulating 4H–SiC-Reference-Cited by-同舟云学术

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Contactless studies of semi-insulating 4H–SiC

Published:2001-12 Issue: Volume:308-310 Page:691-694
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Carlos W.E.,Moore W.J.,Braga G.C.B,Freitas J.A.,Glaser E.R.,Shanabrook B.V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. SiC and GaN High-Voltage Power Switching Devices

2. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

3. A uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman technique

4. Transition Metals in SiC Polytypes, as Studied by Magnetic Resonance Techniques

5. Boron acceptor levels in 6H-SiC bulk samples

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vibrational Absorption of Substitutional Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27

2. Electrical and optical characteristics of vanadium in 4H-SiC;Chinese Physics;2007-05

3. Electron Paramagnetic Resonance Characterization of SiC;SiC Power Materials;2004

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