Electrical and optical characteristics of vanadium in 4H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/5/041/pdf
Reference18 articles.
1. High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates
2. Formation of semi‐insulating 6H‐SiC layers by vanadium ion implantations
3. On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield
4. High temperature Hall effect measurements of semi-insulating 4H–SiC substrates
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1. Doping-dependent nucleation of basal plane dislocations in 4H-SiC;Journal of Physics D: Applied Physics;2022-06-07
2. Effect of carbon on behavior of helium in vanadium: A first-principles investigation;International Journal of Modern Physics B;2018-01-08
3. Spectra study of He-irradiation induced defects in 6H-SiC;Acta Physica Sinica;2014
4. Effects of chromium on structure and mechanical properties of vanadium: A first-principles study;Chinese Physics B;2013-10
5. Methods for Thickness Determination of SiC Homoepilayers by Using Infrared Reflectance Spectroscopy;Chinese Physics Letters;2010-06
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